In-DRAM Cache Management for Low Latency and Low Power 3D-Stacked DRAMs

被引:4
|
作者
Shin, Ho Hyun [1 ,2 ]
Chung, Eui-Young [2 ]
机构
[1] Samsung Elect Co Ltd, Hwasung 18448, South Korea
[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
3D-stacked; DRAM; in-DRAM cache; low-latency; low-power;
D O I
10.3390/mi10020124
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-high capacity and high-bandwidth memory implementations. However, it also suffers from memory wall problems due to long latency, such as with typical 2D-DRAMs. Although there are various cache management techniques and latency hiding schemes to reduce DRAM access time, in a high-performance system using high-capacity 3D-stacked DRAM, it is ultimately essential to reduce the latency of the DRAM itself. To solve this problem, various asymmetric in-DRAM cache structures have recently been proposed, which are more attractive for high-capacity DRAMs because they can be implemented at a lower cost in 3D-stacked DRAMs. However, most research mainly focuses on the architecture of the in-DRAM cache itself and does not pay much attention to proper management methods. In this paper, we propose two new management algorithms for the in-DRAM caches to achieve a low-latency and low-power 3D-stacked DRAM device. Through the computing system simulation, we demonstrate the improvement of energy delay product up to 67%.
引用
收藏
页数:15
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