Temperature stability of a piezoresistive MEMS resonator including self-heating

被引：6

作者：

Bendida, S. ^{[1
]}

Koning, J. J. ^{[1
]}

Bontemps, J. J. M. ^{[1
]}

van Beek, J. T. M. ^{[1
]}

Wu, D. ^{[1
]}

van Gils, M. A. J. ^{[1
]}

Nath, S. ^{[1
]}

机构：

[1] NXP Semicond, NL-6534 AE Nijmegen, Gelderland, Netherlands

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

D O I：

10.1016/j.microrel.2008.06.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature stability of a piezoresistive 1.5 mu m thin SOI resonator at 74 MHz is presented. As compared to capacitive resonators the self-heating due to the bias current causes a further decrease of the resonator frequency, in addition to the well-known dependency on ambient temperature. The interpretation of the resonance frequency as a device temperature is not obvious anymore under self-heating due to the inhomogeneous temperature distribution. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1227 / 1231

页数：5

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