Temperature stability of a piezoresistive MEMS resonator including self-heating

被引：6
|
作者：
Bendida, S. [1 ]
Koning, J. J. [1 ]
Bontemps, J. J. M. [1 ]
van Beek, J. T. M. [1 ]
Wu, D. [1 ]
van Gils, M. A. J. [1 ]
Nath, S. [1 ]
机构：
[1] NXP Semicond, NL-6534 AE Nijmegen, Gelderland, Netherlands
来源：
MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期
关键词：
D O I：
10.1016/j.microrel.2008.06.049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature stability of a piezoresistive 1.5 mu m thin SOI resonator at 74 MHz is presented. As compared to capacitive resonators the self-heating due to the bias current causes a further decrease of the resonator frequency, in addition to the well-known dependency on ambient temperature. The interpretation of the resonance frequency as a device temperature is not obvious anymore under self-heating due to the inhomogeneous temperature distribution. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1227 / 1231
页数：5
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