InAs Diodes Fabricated Using Be Ion Implantation

被引：6

作者：

White, Benjamin S. ^{[1
]}

Sandall, Ian C. ^{[1
]}

David, John P. R. ^{[1
]}

Tan, Chee Hing ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

Annealing; indium arsenide; ion implantation; photodiode; ELECTRON AVALANCHE PHOTODIODES; TEMPERATURE-DEPENDENCE; EXCESS NOISE; INSB; REDISTRIBUTION; IMPURITIES; DIFFUSION; ZN; MG;

D O I：

10.1109/TED.2015.2456434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.

引用

页码：2928 / 2932

页数：5

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