InAs Diodes Fabricated Using Be Ion Implantation

被引：6
|
作者：
White, Benjamin S. [1 ]
Sandall, Ian C. [1 ]
David, John P. R. [1 ]
Tan, Chee Hing [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 09期
基金：
英国工程与自然科学研究理事会;
关键词：
Annealing; indium arsenide; ion implantation; photodiode; ELECTRON AVALANCHE PHOTODIODES; TEMPERATURE-DEPENDENCE; EXCESS NOISE; INSB; REDISTRIBUTION; IMPURITIES; DIFFUSION; ZN; MG;
D O I：
10.1109/TED.2015.2456434
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.
引用
收藏
页码：2928 / 2932
页数：5
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