Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization

被引：0
|
作者：
Berthelemot, C [1 ]
Vigier, P [1 ]
Dumas, JM [1 ]
Clei, A [1 ]
Palla, R [1 ]
Harmand, JC [1 ]
机构：
[1] UNIV LIMOGES,ENSIL,F-87000 LIMOGES,FRANCE
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：674 / 677
页数：4
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