InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance

被引：0

作者：

Wichmann, N ^{[1
]}

Duszynski, I ^{[1
]}

Bollaert, S ^{[1
]}

Wallart, X ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] CNRS, UMR 8520, Inst Electron Microelectron & Nanotechnol, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As double-gate HEMTs with sub-micron gate lengths. These devices have obtained a maximum extrinsic transconductance g(m) of 2650 mS/mm with a corresponding drain current I-d equal to 310 mA/mm.. This extrinsic transconductance is the highest value ever reported for any transistor. Due to this high extrinsic transconductance, the ratio g(m)/I-d is 8V(-1) indicating the high charge control efficiency. Low output conductance g(d) Is obtained, denoting the reduction of short channel effects. The combined high transconductance and the low output conductance induce an extremely high intrinsic unloaded voltage gain (g(m)/g(d)) Of 87.

引用

页码：295 / 298

页数：4

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