InAlAs-InGaAs double-gate HEMTs on transferred substrate

被引：40
|
作者：
Wichmann, N [1 ]
Duszynski, I [1 ]
Wallart, X [1 ]
Bollaert, S [1 ]
Cappy, A [1 ]
机构：
[1] Inst Elect Microelect & Nanotechnol, UMR CNRS, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 06期
关键词：
high-electron mobility transistors (HEMTs); InP; maximum oscillation frequency; transferred substrate;
D O I：
10.1109/LED.2004.829029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication and the de characterization of the first In0.52Al0.48As-In0.53Ga0.47As long double-gate (DG) high-electron mobility transistors (HEMTs). These devices have been obtained using a transferred substrate technique. Although the layer structure has not been optimized, a maximum extrinsic transconductance gm of 450 mS/mm is obtained. At the same bias voltage, the drain current I-d is 120 mA/mm, which gives a large ratio gm/I-d of 3.8 V-1, indicating the improvement of the charge control efficiency duo to the DG structure.
引用
收藏
页码：354 / 356
页数：3
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