InAlAs-InGaAs double-gate HEMTs on transferred substrate

被引：40

作者：

Wichmann, N ^{[1
]}

Duszynski, I ^{[1
]}

Wallart, X ^{[1
]}

Bollaert, S ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, UMR CNRS, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 06期

关键词：

high-electron mobility transistors (HEMTs); InP; maximum oscillation frequency; transferred substrate;

D O I：

10.1109/LED.2004.829029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and the de characterization of the first In0.52Al0.48As-In0.53Ga0.47As long double-gate (DG) high-electron mobility transistors (HEMTs). These devices have been obtained using a transferred substrate technique. Although the layer structure has not been optimized, a maximum extrinsic transconductance gm of 450 mS/mm is obtained. At the same bias voltage, the drain current I-d is 120 mA/mm, which gives a large ratio gm/I-d of 3.8 V-1, indicating the improvement of the charge control efficiency duo to the DG structure.

引用

页码：354 / 356

页数：3

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