Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

被引：0

作者：

Vasallo, BG ^{[1
]}

Mateos, J ^{[1
]}

Pardo, D ^{[1
]}

González, T ^{[1
]}

机构：

[1] Univ Salamanca, Dept Fis Aplicada, Salamanca 37008, Spain

来源：

2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We perform a microscopic analysis of the degradation originated by the kink effect in the dynamic and noise performance of short-channel InAlAs/InGaAs lattice matched HEMTs by using a 2D ensemble Monte Carlo simulator. The onset of kink effect leads to a significant increase of the drain conductance, whose frequency dependence reflects the influence of the processes at the origin of the kink effect. Concerning the noise performance, the kink effect provokes an enhancement in the drain- and gate-current noise at low frequency, with a characteristic cutoff frequency related to the impact ionization rate and hole recombination time.

引用

页码：123 / 126

页数：4

共 50 条

[1] Kink effect in InAlAs/InGaAs short-channel HEMTs:: Influence on the dynamic and noise performance
Vasallo, BG
Mateos, J
Pardo, D
González, T
[J]. 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 188 - 191
[2] Monte Carlo analysis of kink effect in short-channel InAlAs/InGaAs HEMTs
Vasallo, BG
González, T
Pardo, D
Mateos, J
[J]. 2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 106 - 109
[3] Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors
Vasallo, BG
Mateos, J
Pardo, D
González, T
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (09) : 956 - 960
[4] Kink-effect-related noise in InAlAs/InGAs short-channel HEMTS
Vasallo, BG
Mateos, J
Pardo, D
González, T
[J]. NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 415 - 423
[5] Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors
[J]. Vasallo, B.G. (a50343@usal.es), 1600, American Institute of Physics Inc. (95):
[6] Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors
Vasallo, BG
Mateos, J
Pardo, D
González, T
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 8271 - 8274
[7] A new dynamic model for the kink effect in InAlAs/InGaAs HEMTs
Somerville, MH
Ernst, A
del Alamo, JA
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 243 - 246
[8] Dynamics of the kink effect in InAlAs/InGaAs HEMTs
Ernst, AN
Somerville, MH
delAlamo, JA
[J]. 1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 353 - 356
[9] Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors
Vasallo, BG
Mateos, J
Pardo, D
González, T
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 4096 - 4101
[10] Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors
[J]. Vasallo, B.G. (a50343@usal.es), 1600, American Institute of Physics Inc. (94):

← 1 2 3 4 5 →