Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

被引：0
|
作者：
Vasallo, BG [1 ]
Mateos, J [1 ]
Pardo, D [1 ]
González, T [1 ]
机构：
[1] Univ Salamanca, Dept Fis Aplicada, Salamanca 37008, Spain
来源：
2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2005年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We perform a microscopic analysis of the degradation originated by the kink effect in the dynamic and noise performance of short-channel InAlAs/InGaAs lattice matched HEMTs by using a 2D ensemble Monte Carlo simulator. The onset of kink effect leads to a significant increase of the drain conductance, whose frequency dependence reflects the influence of the processes at the origin of the kink effect. Concerning the noise performance, the kink effect provokes an enhancement in the drain- and gate-current noise at low frequency, with a characteristic cutoff frequency related to the impact ionization rate and hole recombination time.
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页码：123 / 126
页数：4
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