Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs

被引：6
|
作者：
Suemitsu, T
Enoki, T
Ishii, Y
机构：
[1] NTT LSI Laboratories, Atsugi, Kanagawa
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 12期
关键词：
high electron mobility transistors; gallium indium arsenide;
D O I：
10.1049/el:19960726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The mechanism of kink in InP based InAlAs/InGaAs HEMTs is studied using HEMTs with a body contact (BC) electrode consisting of a buried p layer and a p-type contact. Kink modification was directly observed by varying BC bias, which shows kink is an anomalous suppression of drain current at low drain bias, not a parasitic current at high bias. Based on this result, the origin of kink is discussed.
引用
收藏
页码：1143 / 1144
页数：2
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