Analysis of SNR in 4-transistor Backside-illuminated CMOS image sensor

被引：0
|
作者：
Wang Sheng-kai [1 ,2 ]
Jin Chuan [1 ,2 ]
Qiao Kai [1 ,2 ]
Jiao Gang-cheng [1 ,2 ]
Cheng Hong-chang [1 ,2 ]
Yan Lei [1 ,2 ]
机构：
[1] Sci & Technol Low Light Level Night Vis Lab, Xian 710065, Shaanxi, Peoples R China
[2] Kunming Inst Phys, Kunming 650223, Yunnan, Peoples R China
来源：
FIFTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION | 2019年 / 11023卷
关键词：
pixel; BSI-CMOS; noise; SNR;
D O I：
10.1117/12.2521805
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Based on the study of working principle and making process of 4-transistor Backside-illuminated CMOS (4T BSI-CMOS), Signal-to-noise ratio (SNR) model are established and quantitative calculating formula is derived. In addition, factors of influencing SNR are analyzed. Two methods are presented to enhance the SNR, the one is optimizing structure of 4T BSI-CMOS image sensor to strengthen the signal and the other one is correlated double sampling to decrease fixed pattern noise (FPN). These results serve as useful guidelines to enhance the SNR of 4T BSI-CMOS and improve the image quality.
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页数：6
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