Backside-illuminated CMOS photodiodes with polysilicon grating back-reflectors

被引：0
|
作者：
Lu, Chen-Han [1 ]
Su, Hsiu-Wei [1 ]
Hung, Yung-Jr [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Photon, 70 Lienhai Rd, Kaohsiung 80424, Taiwan
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polysilicon grating reflectors are employed in thin backside-illuminated CMOS photodiodes to not only improve its responsivity for near-infrared light but also allow polarization-sensitive photocurrent generation. A 1.14x photocurrent enhancement is obtained for TE-polarized incidence.
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页数：2
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    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (02) : 193 - 196
  • [2] Analysis and potentialities of backside-illuminated thinned CMOS imagers
    Vatus, CM
    Magnan, P
    [J]. DETECTORS AND ASSOCIATED SIGNAL PROCESSING, 2004, 5251 : 178 - 186
  • [3] Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection
    Malinowski, Pawel E.
    John, Joachim
    Duboz, Jean Yves
    Hellings, Geert
    Lorenz, Anne
    Madrid, Juan Gabriel Rodriguez
    Sturdevant, Charles
    Cheng, Kai
    Leys, Maarten
    Derluyn, Joff
    Das, Johan
    Germain, Marianne
    Minoglou, Kyriaki
    De Moor, Piet
    Frayssinet, Eric
    Semond, Fabrice
    Hochedez, Jean-Francois
    Giordanengo, Boris
    Mertens, Robert
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1308 - 1310
  • [4] Backside-illuminated lateral PIN photodiode for CMOS image sensor on SOS substrate
    Xu, C
    Shen, C
    Wu, W
    Chan, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) : 1110 - 1115
  • [5] Analysis of SNR in 4-transistor Backside-illuminated CMOS image sensor
    Wang Sheng-kai
    Jin Chuan
    Qiao Kai
    Jiao Gang-cheng
    Cheng Hong-chang
    Yan Lei
    [J]. FIFTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION, 2019, 11023
  • [6] Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application
    Park, Jongseo
    Choi, Kyeong-Keun
    An, Jehyun
    Kang, Bohyeon
    You, Hyeonseo
    Hong, Giryun
    Ahn, Sung-Min
    Baek, Rock-Hyun
    [J]. IEEE ACCESS, 2023, 11 : 60660 - 60667
  • [7] High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors
    Liu, Bingkai
    Li, Yudong
    Wen, Lin
    Feng, Jie
    Cai, Yulong
    Guo, Qi
    [J]. IEEE Transactions on Nuclear Science, 2024, 71 (11) : 2393 - 2399
  • [8] Modelling of device structure effects in backside illuminated CMOS compatible photodiodes
    Hinckley, S
    Gluszak, EA
    Eshraghian, K
    [J]. COMMAD 2000 PROCEEDINGS, 2000, : 399 - 402
  • [9] Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
    Zhang, Xiang
    Li, Yudong
    Wen, Lin
    Feng, Jie
    Zhou, Dong
    Cai, Yulong
    Liu, Bingkai
    Fu, Jing
    Guo, Qi
    [J]. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 57 (09) : 1015 - 1021
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    Chang, Ting-Chang
    [J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (01): : 342 - 347
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