High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors

被引：0
|
作者：
Liu, Bingkai [1 ]
Li, Yudong [1 ]
Wen, Lin [1 ]
Feng, Jie [1 ]
Cai, Yulong [2 ]
Guo, Qi [1 ]
机构：
[1] Xinjiang Technical Institute Of Physics And Chemistry, Chinese Academy Of Sciences, State Key Laboratory Of Functional Materials And Devices For Special Environmental Conditions, Xinjiang Key Laboratory Of Extreme Environment Electronics, Ürümqi,830011, Ch
[2] Innovation Academy For Microsatellites Of Chinese Academy Of Sciences, Shanghai,200020, China
来源：
IEEE Transactions on Nuclear Science | 2024年 / 71卷 / 11期
关键词：
D O I：
10.1109/TNS.2024.3466180
中图分类号：
学科分类号：
摘要：
32
引用
收藏
页码：2393 / 2399
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