Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors

被引：0

作者：

LIU Bingkai ^{[1
,2
,3
]}

LI Yudong ^{[1
,2
]}

WEN Lin ^{[1
,2
]}

ZHOU Dong ^{[1
,2
]}

FENG Jie ^{[1
,2
]}

ZHANG Xiang ^{[1
,2
,3
]}

CAI Yulong ^{[1
,2
,3
]}

FU Jing ^{[1
,2
,3
]}

GUO Qi ^{[1
,2
]}

机构：

[1] Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences

[2] Xinjiang Key Laboratory of Electronic Information Material and Device

[3] University of Chinese Academy of Sciences

来源：

Chinese Journal of Electronics | 2021年 / 30卷 / 01期

基金：

中国科学院西部之光基金; 中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TP212 [发送器（变换器）、传感器];

学科分类号：

080202 ;

摘要：

The purpose of this work is to investigate the influence of the epitaxial layer thickness of Backside-illuminated CMOS image sensors（BSI CISs） on dark signal behaviors. BSI CISs with the high quantum efficiency and sensitivity were irradiated by 1 MeV neutron up to the fluences of 10;cm;. The displacement damage induced variations of the mean dark signal,Dark signal nonuniformity（DSNU）, dark signal spikes and Random telegraph signal（RTS） on the different epitaxial layer thicknesses are analyzed. The experimental results show that there is no obvious correlation between the degradations of dark signal parameters and the epitaxial layer thickness, suggesting that the electric-optical performance of BSI CISs can be improved by optimizing the epitaxial layer thickness.

引用

页码：180 / 184

页数：5

共 18 条

[1] Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
Liu Bingkai
Li Yudong
Wen Lin
Zhou Dong
Feng Jie
Zhang Xiang
Cai Yulong
Fu Jing
Guo Qi
[J]. CHINESE JOURNAL OF ELECTRONICS, 2021, 30 (01) : 180 - 184
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[4] Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
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[5] Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS
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[J]. Science China Information Sciences, 2019, 62
[10] Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors
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Hao NING
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Zhibin YAO
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