Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS

被引：0

作者：

Wang, Zujun ^{[1
]}

Xue, Yuanyuan ^{[1
]}

Chen, Wei ^{[1
]}

Guo, Xiaoqiang ^{[1
]}

Yang, Xie ^{[2
]}

Jia, Tongxuan ^{[3
]}

Nie, Xu ^{[3
]}

Lai, Shankun ^{[3
]}

Huang, Gang ^{[3
]}

Yao, Zhibin ^{[1
]}

He, Baoping ^{[1
]}

Sheng, Jiangkun ^{[1
]}

Ma, Wuying ^{[1
]}

Dong, Guantao ^{[1
]}

机构：

[1] State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xian,710024, China

[2] Research Institute of Xian High Technology, Xian,710024, China

[3] School of Materials Science and Engineering, Xiangtan University, Xiangtan,411105, China

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2022年 / 1026卷

基金：

中国国家自然科学基金;

关键词：

CMOS integrated circuits - Radiation effects - Spalling - Neutrons - Digital cameras - Degradation - Neutron irradiation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We present experiments with BSI-CISs (backside-illuminated CMOS image sensors) conducted at the WNS (white neutron source) at CSNS (China spallation neutron source) facility. Radiation effects of BSI-CISs from irradiation of high energy neutrons are investigated. The image sensors are irradiated in unbiased condition as well as in biased regular operation conditions. The dark current, the dark current non-uniformity, the fixed pattern noise, and the temporal noise versus neutron radiation fluence are analyzed. The degradations of the BSI CISs at different biased condition during neutron radiation are compared. The experimental results of the conversion gain show no change before and after radiation even at 2.0 × 1011 n/cm 2. The degradation mechanisms of the neutron radiation sensitive parameters are demonstrated. © 2021 Elsevier B.V.

引用

共 23 条

[1] Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS
Wang, Zujun
Xue, Yuanyuan
Chen, Wei
Guo, Xiaoqiang
Yang, Xie
Jia, Tongxuan
Nie, Xu
Lai, Shankun
Huang, Gang
Yao, Zhibin
He, Baoping
Sheng, Jiangkun
Ma, Wuying
Dong, Guantao
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2022, 1026
[2] High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors
Liu, Bingkai
Li, Yudong
Wen, Lin
Feng, Jie
Cai, Yulong
Guo, Qi
[J]. IEEE Transactions on Nuclear Science, 2024, 71 (11) : 2393 - 2399
[3] Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
Zhang, Xiang
Li, Yudong
Wen, Lin
Feng, Jie
Zhou, Dong
Cai, Yulong
Liu, Bingkai
Fu, Jing
Guo, Qi
[J]. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 57 (09) : 1015 - 1021
[4] Displacement Damage Effects in Backside Illuminated CMOS Image Sensors
Liu, Bingkai
Li, Yudong
Wen, Lin
Zhao, Jinghao
Zhou, Dong
Feng, Jie
Guo, Qi
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (06) : 2907 - 2914
[5] High-Voltage Backside-Illuminated CMOS Photovoltaic Module for Powering Implantable Temperature Sensors
Hung, Yung-Jr
Cai, Meng-Syuan
Chen, Jia-Fa
Su, Hsiu-Wei
Jen, Po-Chang
Chen, Poki
Shih, Chih-Cheng
Chang, Ting-Chang
[J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (01): : 342 - 347
[6] Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
LIU Bingkai
LI Yudong
WEN Lin
ZHOU Dong
FENG Jie
ZHANG Xiang
CAI Yulong
FU Jing
GUO Qi
[J]. Chinese Journal of Electronics, 2021, 30 (01) : 180 - 184
[7] Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
Liu Bingkai
Li Yudong
Wen Lin
Zhou Dong
Feng Jie
Zhang Xiang
Cai Yulong
Fu Jing
Guo Qi
[J]. CHINESE JOURNAL OF ELECTRONICS, 2021, 30 (01) : 180 - 184
[8] Doping-selective etching of silicon for wafer thinning in the fabrication of backside-illuminated stacked CMOS image sensors
Venkataraman, Nandini
Risse, Benedikt
Decierdo, Gregorio
Singh, Navab
Senthilkumar, Darshini
Kandasamy, Deepthi
Toh, Eng Huat
Lim, Louis
[J]. 2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC, 2023, : 1524 - 1530
[9] Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
Liu, Bingkai
Li, Yudong
Wen, Lin
Zhou, Dong
Feng, Jie
Zhang, Xiang
Cai, Yulong
Fu, Jing
Chen, Jiawei
Guo, Qi
[J]. RESULTS IN PHYSICS, 2020, 19
[10] Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors
Liu, Bingkai
Li, Yudong
Wen, Lin
Zhang, Xiang
Guo, Qi
[J]. SENSORS, 2023, 23 (13)

← 1 2 3 →