Floating body effects in partially-depleted SOI CMOS circuits

被引：0
|
作者：
Lu, PF [1 ]
Ji, J [1 ]
Chuang, CT [1 ]
Wagner, LF [1 ]
Hsieh, CM [1 ]
Kuang, JB [1 ]
Hsu, L [1 ]
Pelella, MM [1 ]
Chu, S [1 ]
Anderson, CJ [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
来源：
1996 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - DIGEST OF TECHNICAL PAPERS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：139 / 144
页数：6
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