Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cell

被引：1
|
作者：
Chan, ACK [1 ]
Chan, MS [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期
关键词：
flash; silicon-on-insulator (SOI); transient analysis;
D O I：
10.1109/LED.2003.808840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The floating-body effect of nonvolatile memory cells fabricated using partially depleted silicon-on-insulator (SOI) technology has been investigated using two-dimensional numerical device simulation. Compared with similar bulk devices, the floating-body effect of. partially depleted SOI MOSFETs introduces instability in the value of the drain current during sensing and extra hot-electron gate current in programming. The effects of the drain-current instability on the error margins in read operation are studied. The floating-body effect is found to be heavily dependent on biasing condition.
引用
收藏
页码：75 / 77
页数：3
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