Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cell

被引：1

作者：

Chan, ACK ^{[1
]}

Chan, MS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期

关键词：

flash; silicon-on-insulator (SOI); transient analysis;

D O I：

10.1109/LED.2003.808840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The floating-body effect of nonvolatile memory cells fabricated using partially depleted silicon-on-insulator (SOI) technology has been investigated using two-dimensional numerical device simulation. Compared with similar bulk devices, the floating-body effect of. partially depleted SOI MOSFETs introduces instability in the value of the drain current during sensing and extra hot-electron gate current in programming. The effects of the drain-current instability on the error margins in read operation are studied. The floating-body effect is found to be heavily dependent on biasing condition.

引用

页码：75 / 77

页数：3

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