Selective area growth of GaSb nano-templates on GaAs (001) using atomic hydrogen assisted molecular beam epitaxy

被引：0
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作者：
Desplanque, Ludovic [1 ,2 ]
Fahed, Maria [1 ,2 ]
Troadec, David [1 ,2 ]
Ruterana, Pierre [3 ]
Wallart, Xavier [1 ,2 ]
机构：
[1] CNRS, IEMN, UMR 8520, F-75700 Paris, France
[2] Univ Lille, Lille, France
[3] UCBN, CEA, CNRS, ENSICAEN,CIMAP,UMR 6252, Caen, France
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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