Characterization of Flicker Noise in Dual Material Gate Silicon Nanowire Transistors

被引：0

作者：

Anandan, P. ^{[1
]}

Saranya, V. ^{[1
]}

Mohankumar, N. ^{[1
]}

机构：

[1] SKP Engn Coll, Tiruvannamalai 606611, Tamil Nadu, India

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2017年 / 12卷 / 01期

关键词：

Silicon Nanowire Transistor; Flicker Noise; Power Spectral Density; Dual Material Gate; SOI MOSFET;

D O I：

10.1166/jno.2017.1829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the effect of flicker noise on the performance of Dual Material Gate Silicon Nanowire Transistor is investigated. Gate engineering in the Silicon Nanowire Transistor have a strong impact on Flicker noise. The spectral density of flicker noise for Dual Material Gate Silicon Nanowire Transistor as a function of various parameters like gate to source voltage, frequency, drain current, drain to source voltage, and different gate length for different drain voltages is observed. The simulation results of Dual Material Gate Silicon Nanowire Transistor are compared with single gate Silicon Nanowire Transistors for improved performance.

引用

页码：72 / 75

页数：4

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