Characterization of Flicker Noise in Dual Material Gate Silicon Nanowire Transistors

In this paper the effect of flicker noise on the performance of Dual Material Gate Silicon Nanowire Transistor is investigated. Gate engineering in the Silicon Nanowire Transistor have a strong impact on Flicker noise. The spectral density of flicker noise for Dual Material Gate Silicon Nanowire Transistor as a function of various parameters like gate to source voltage, frequency, drain current, drain to source voltage, and different gate length for different drain voltages is observed. The simulation results of Dual Material Gate Silicon Nanowire Transistor are compared with single gate Silicon Nanowire Transistors for improved performance.