Cell-based layout techniques supporting gate-level voltage scaling for low power

被引:1
|
作者
Yeh, CW [1 ]
Kang, YS [1 ]
机构
[1] Natl Chung Cheng Univ, Dept Elect Engn, Chiayi 621, Taiwan
关键词
layout; low power; standard cell; voltage;
D O I
10.1109/92.974912
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Gate-level voltage scaling Is an approach that allows different supply voltages for different gates In order to achieve power reduction. Previous research focused on determining the voltage level for each gate and ascertaining the power saving capability of the approach via logic-level power estimation. In this correspondence, we present cell-based layout techniques that make the approach feasible. We first propose a new block layout style and a placement strategy to support the voltage scaling with conventional standard cell libraries. Then, we propose a new cell layout style with built-in multiple supply rails so that gate-level voltage scaling can be immediately embedded in a typical cell-based design flow. Experimental results show that proposed techniques maintain good power benefit while introducing moderate layout overhead.
引用
收藏
页码:983 / 986
页数:4
相关论文
共 50 条
  • [21] Cell-Based ESD Diodes with a Zigzag-Shaped Layout to Enhance the ESD Survival Level
    Son, Minoh
    Park, Changkun
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2017, 26 (02)
  • [22] New power-of-2 RNS scaling scheme for cell-based IC design
    Meyer-Bäse, U
    Stouraitis, T
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2003, 11 (02) : 280 - 283
  • [23] Performance analysis of multi-scaling voltage level shifter for low-power applications
    Vaithiyanathan, D.
    Kurmi, Megha Singh
    Mishra, Alok Kumar
    Pari, Britto J.
    WORLD JOURNAL OF ENGINEERING, 2020, 17 (06) : 803 - 809
  • [24] The Design of an Ultra-low Power Buck Regulator Supporting Dynamic Voltage Scaling for Wireless Sensor Networks
    Schemm, Nathan
    Balkir, Sina
    Hoffman, Michael W.
    ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5, 2009, : 828 - 831
  • [25] Multi-trench-gate Cell Concept for Low Voltage Superjunction Power MOSFETs
    Eikyu, K.
    Sakai, A.
    Yamashita, T.
    Shimomura, A.
    Yanagigawa, H.
    Mori, K.
    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 553 - 556
  • [26] An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques
    Majid Moghaddam
    Somayeh Timarchi
    Mohammad Hossein Moaiyeri
    Mohammad Eshghi
    Circuits, Systems, and Signal Processing, 2016, 35 : 1437 - 1455
  • [27] An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques
    Moghaddam, Majid
    Timarchi, Somayeh
    Moaiyeri, Mohammad Hossein
    Eshghi, Mohammad
    CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2016, 35 (05) : 1437 - 1455
  • [29] LOW POWER RS CODEC USING CELL-BASED RECONFIGURABLE PROCESSOR
    El-Rayis, Ahmed O.
    Zhao, Xin
    Arslan, Tughrul
    Erdogan, Ahmet T.
    IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS, 2009, : 279 - 282
  • [30] Low power, density, and better tools propel cell-based ASICs
    Tuck, B
    COMPUTER DESIGN, 1996, 35 (13): : 79 - &