Effect of measurement temperature on the dielectric and ferroelectric properties of various sol-gel derived PLZT thin films

被引：0

作者：

McCarthy, F ^{[1
]}

McCarthy, K ^{[1
]}

Teowee, G ^{[1
]}

Bukowski, T ^{[1
]}

Alexander, T ^{[1
]}

Uhlmann, DR ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT MAT SCI & ENGN,TUCSON,AZ 85721

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

sol-gel; ferroelectric films; dielectric; PLZT; temperature;

D O I：

10.1080/10584589708012996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sol-gel derived PLZT, including PbTiO3, PbLaTiO3 28, PLZT 9/65/35 and PZT 53/47 films were prepared on platinized substrates. The dielectric and ferroelectric properties of the films were measured at 260K - 580K. The values of polarization, coercive field, dielectric constant and dissipation factor in these films typically increased with increasing temperature. The changes in dielectric properties of the films with temperature were not sharp unlike the transitions in single crystals or bulk ceramics. The pyroelectric coefficients, on the other hand, decreased monotonically with increasing temperature in all these films.

引用

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页码：213 / 220

页数：8

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