Pyroelectric properties of various sol-gel derived PLZT thin films

被引：14

作者：

McCarthy, KC ^{[1
]}

McCarthy, FS ^{[1
]}

Teowee, G ^{[1
]}

Bukowski, TJ ^{[1
]}

Alexander, TP ^{[1
]}

Uhlmann, DR ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT MAT SCI & ENGN,TUCSON,AZ 85721

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

pyroelectric coefficient; thin films; ferroelectric;

D O I：

10.1080/10584589708013012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pyroelectric IR imaging, especially based on monolithic technology integrated with semiconductors, is receiving increased attention for the next generation of room temperature uncooled IR cameras. In the present work, sol-gel derived PZT, including PbTiO3, PLT 28, PLZT 9/65/35, and PZT 53/47, films were prepared on platinized Si substrates. Their pyroelectric properties were determined, and are discussed with respect to film microstructures, processing, and chemistries. Pyroelectric coefficients as large as 7.7x10(-8) C/cm(2)-K were obtained for PZT 53/47 films.

引用

页码：377 / 385

页数：9

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