Effect of measurement temperature on the dielectric and ferroelectric properties of various sol-gel derived PLZT thin films

被引：0

作者：

McCarthy, F ^{[1
]}

McCarthy, K ^{[1
]}

Teowee, G ^{[1
]}

Bukowski, T ^{[1
]}

Alexander, T ^{[1
]}

Uhlmann, DR ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT MAT SCI & ENGN,TUCSON,AZ 85721

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

sol-gel; ferroelectric films; dielectric; PLZT; temperature;

D O I：

10.1080/10584589708012996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sol-gel derived PLZT, including PbTiO3, PbLaTiO3 28, PLZT 9/65/35 and PZT 53/47 films were prepared on platinized substrates. The dielectric and ferroelectric properties of the films were measured at 260K - 580K. The values of polarization, coercive field, dielectric constant and dissipation factor in these films typically increased with increasing temperature. The changes in dielectric properties of the films with temperature were not sharp unlike the transitions in single crystals or bulk ceramics. The pyroelectric coefficients, on the other hand, decreased monotonically with increasing temperature in all these films.

引用

下载

页码：213 / 220

页数：8

共 50 条

[21] Dielectric properties of multilayered ferroelectric thin films fabricated by sol-gel method
Ohya, Yutaka, 1600, JJAP, Minato-ku, Japan (33):
[22] Ferroelectric and dielectric properties of sol-gel derived BaxSr1-xTiO3 thin films
Adikary, SU
Chan, HLW
THIN SOLID FILMS, 2003, 424 (01) : 70 - 74
[23] Low temperature processing of sol-gel derived PLZT thin film
Hirano, T
Kawai, H
Suzuki, H
Kaneko, S
Wada, T
FERROELECTRICS, 1999, 231 (1-4) : 799 - 804
[24] Low temperature processing of sol-gel derived PLZT thin film
Hirano, Tomio
Kawai, Hiroki
Suzuki, Hisao
Kaneko, Shoji
Wada, Tatsuya
Ferroelectrics, 1999, 231 (1 -4 pt 3): : 211 - 216
[25] Optical properties of sol-gel derived ferroelectric films
Journal of Non-Crystalline Solids, 1995, 187
[26] Ferroelectric and dielectric behaviors of PLZT/PZT multi-layered thin films prepared by sol-gel method
Hwang, JY
Jeong, SY
Cho, CR
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1093 - S1096
[27] Fabrication of sol-gel derived PZT ferroelectric thin films
1600, High Technology Letters, Beijing, China (05):
[28] Stress effects in sol-gel derived ferroelectric thin films
Lian, L
Sottos, NR
JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 629 - 634
[29] Electrical properties of sol-gel processed PZT and PLZT thin films
Vijayaraghavan, Chariar M.
Goel, T.C.
Mendiratta, R.G.
Proceedings - International Symposium on Electrets, 1999, : 477 - 480
[30] Optical properties of PLZT thin films fabricated by a sol-gel method
Ishii, M
Satoh, K
Kato, M
Kurihara, K
ELECTROCERAMICS IN JAPAN VII, 2004, 269 : 65 - 68

← 1 2 3 4 5 →