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Temperature dependence of the minority-carrier mobility-lifetime product for probing band-tail states in microcrystalline silicon
被引:0
|
作者
:
Brüggemann, R
论文数:
0
引用数:
0
h-index:
0
机构:
Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
Brüggemann, R
[
1
]
Kunz, O
论文数:
0
引用数:
0
h-index:
0
机构:
Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
Kunz, O
[
1
]
机构
:
[1]
Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
来源
:
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
|
2002年
/ 234卷
/ 03期
关键词
:
D O I
:
10.1002/1521-3951(200212)234:3<R16::AID-PSSB999916>3.0.CO;2-6
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:R16 / R18
页数:3
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