DETERMINATION OF RECOMBINATION CENTER POSITION FROM THE TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN THE BASE REGION OF P-N-JUNCTION SOLAR-CELLS

被引：8

作者：

BHATTACHARYA, DK ^{[1
]}

MANSINGH, A ^{[1
]}

SWARUP, P ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110007,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2942 / 2947

页数：6

共 50 条

[1] DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS
WU, CY
CHEN, JF
SOLID-STATE ELECTRONICS, 1982, 25 (07) : 679 - 682
[2] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN SINGLE-CRYSTAL AND POLYCRYSTALLINE SI SOLAR-CELLS
MATHUR, PC
SHARMA, RP
SAXENA, P
ARORA, JD
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3651 - 3654
[3] SYSTEM FOR MEASURING THE MINORITY-CARRIER LIFETIME IN THE BASE OF SILICON SOLAR-CELLS
ACEVEDO, AM
CRUZ, GC
REVISTA MEXICANA DE FISICA, 1994, 40 (04) : 637 - 645
[4] DETERMINATION OF LIFETIME AND SURFACE RECOMBINATION VELOCITY OF P-N-JUNCTION SOLAR-CELLS AND DIODES BY OBSERVING TRANSIENTS
LINDHOLM, FA
LIOU, JJ
NEUGROSCHEL, A
JUNG, TW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 277 - 285
[5] ANALYSIS OF THE PHOTO VOLTAGE DECAY (PVD) METHOD FOR MEASURING MINORITY-CARRIER LIFETIMES IN P-N-JUNCTION SOLAR-CELLS
VONROOS, O
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5833 - 5837
[6] ON THE DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN THE BASE REGION OF N+-P-P+ SILICON SOLAR-CELLS USING PHOTORESPONSE METHODS
BASU, PK
SINGH, SN
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 33 (03) : 317 - 329
[7] DETERMINATION OF LIFETIMES AND RECOMBINATION CURRENTS IN P-N-JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS
NEUGROSCHEL, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 108 - 115
[8] A NEW METHOD OF DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN THE BASE REGION OF SILICON SOLAR-CELLS
BASU, PK
SINGH, SN
ARORA, NK
CHAKRAVARTY, BC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) : 367 - 372
[9] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VPE GAP-N, TE
WOGGON, U
WANDEL, K
WEINERT, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : K205 - K208
[10] DETERMINATION OF EFFECTIVE SURFACE RECOMBINATION VELOCITY AND MINORITY-CARRIER LIFETIME IN HIGH-EFFICIENCY SI SOLAR-CELLS
ROSE, BH
WEAVER, HT
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 238 - 247

← 1 2 3 4 5 →