Temperature dependence of the minority-carrier mobility-lifetime product for probing band-tail states in microcrystalline silicon

被引：0
|
作者：
Brüggemann, R [1 ]
Kunz, O [1 ]
机构：
[1] Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 234卷 / 03期
关键词：
D O I：
10.1002/1521-3951(200212)234:3<R16::AID-PSSB999916>3.0.CO;2-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：R16 / R18
页数：3
相关论文
共 25 条
  • [11] INSTRUMENT MEASURING TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME WITHOUT CONTACT
    OHSAWA, A
    HONDA, K
    TAKIZAWA, R
    TOYOKURA, N
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (02): : 210 - 212
  • [12] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VPE GAP-N, TE
    WOGGON, U
    WANDEL, K
    WEINERT, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : K205 - K208
  • [13] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIMES IN CZOCHRALSKI SILICON-CRYSTALS
    OHSAWA, A
    HONDA, K
    TAKIZAWA, R
    TOYOKURA, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C328 - C329
  • [14] ON THE EFFECT OF HIGH-TEMPERATURE HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN SILICON
    GLINCHUK, KD
    LITOVCHENKO, NM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01): : K75 - K78
  • [15] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN IRON-DIFFUSED P-TYPE SILICON-WAFERS
    HAYAMIZU, Y
    HAMAGUCHI, T
    USHIO, S
    ABE, T
    SHIMURA, F
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3077 - 3081
  • [16] Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance
    Jock, R. M.
    Shankar, S.
    Tyryshkin, A. M.
    He, Jianhua
    Eng, K.
    Childs, K. D.
    Tracy, L. A.
    Lilly, M. P.
    Carroll, M. S.
    Lyon, S. A.
    APPLIED PHYSICS LETTERS, 2012, 100 (02)
  • [17] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER RECOMBINATION VELOCITIES AT GRAIN-BOUNDARIES IN SILICON
    SEAGER, CH
    APPLIED PHYSICS LETTERS, 1982, 41 (09) : 855 - 857
  • [18] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER MOBILITY AND RECOMBINATION TIME IN P-TYPE GAAS
    BEYZAVI, K
    LEE, K
    KIM, DM
    NATHAN, MI
    WRENNER, K
    WRIGHT, SL
    APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1268 - 1270
  • [19] An analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices
    Reggiani, S
    Valdinoci, M
    Colalongo, L
    Rudan, M
    Baccarani, G
    VLSI DESIGN, 2000, 10 (04) : 467 - 483
  • [20] HIGH-TEMPERATURE PROCESSING OF CZ SILICON SUBSTRATES - DEFECTS, DENUDED ZONES, AND MINORITY-CARRIER LIFETIME
    ROZGONI, GA
    YONG, DK
    CAO, YH
    RADZIMSKI, Z
    CHIOU, HD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : C445 - C445
123