Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

被引：5

作者：

Chou, DW ^{[1
]}

Wang, HH ^{[1
]}

Wang, YH ^{[1
]}

Houng, MP ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 78卷 / 03期

关键词：

oxide films; liquid phase; refractive indices; dielectric constant; breakdown field;

D O I：

10.1016/S0254-0584(02)00424-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) x 10(-6) A cm(-2) at the electric filed of 1 MVcm(-1). The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of similar to7 MV cm(-1) were obtained as refractive index is similar to2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：772 / 777

页数：6

共 50 条

[41] Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices
Liu, Lu
Lu, Hanhan
Xu, Jingping
Lai, Pui-To
Tang, Wing-Man
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (03)
[42] Interfacial and electrical properties of GaAs metal-oxide-semiconductor device with TiOxNy High-k Gate Dielectrics
Das, T.
Mahata, C.
Sutradhar, G.
Bose, P. K.
Maiti, C. K.
DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3, 2011, 35 (03): : 325 - 332
[43] METAL-OXIDE-SEMICONDUCTOR INTERFACE STUDIES FOR MBE AND LPE GROWN GAAS USING AES AND SIMS
KAZMERSKI, LL
IRELAND, PJ
SHELDON, P
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 277 - 277
[44] Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization
Cunha, Jose M. V.
Barreiros, M. Alexandra
Curado, Marco A.
Lopes, Tomas S.
Oliveira, Kevin
Oliveira, Antonio J. N.
Barbosa, Joao R. S.
Vilanova, Antonio
Brites, Maria Joao
Mascarenhas, Joao
Flandre, Denis
Silva, Ana G.
Fernandes, Paulo A.
Salome, Pedro M. P.
ADVANCED MATERIALS INTERFACES, 2021, 8 (20):
[45] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
SNOW, EH
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 894 - +
[46] Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications
Cao, Y
Zhang, J
Li, X
Kosel, TH
Fay, P
Hall, DC
Zhang, XB
Dupuis, RD
Jasinski, JB
Liliental-Weber, Z
APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
[47] INVESTIGATION OF INFLUENCE OF METAL SURFACE IMPURITIES IN SILICON ON PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
RAKOV, AV
KOROLEV, MA
PAVLOV, EA
PETROVA, AG
SHEPOVAL.GA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 433 - &
[48] IMPACTS OF ANNEALING PROCESSES ON THE ELECTRICAL PROPERTIES OF GASB METAL-OXIDE-SEMICONDUCTOR DEVICES
Zeng, Zhenhua
Sun, Bing
Chang, Hudong
Zhao, Wei
Yang, Xu
Zhou, Jiahui
Wang, Shengkai
Zhang, Xiong
Cui, Yiping
Liu, Honggang
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[49] Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
Crupi, I
Lombardo, S
Spinella, C
Bongiorno, C
Liao, Y
Gerardi, C
Fazio, B
Vulpio, M
Privitera, S
JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5552 - 5558
[50] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
STIRN, RJ
YEH, YCM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

← 1 2 3 4 5 →