METAL-OXIDE-SEMICONDUCTOR INTERFACE STUDIES FOR MBE AND LPE GROWN GAAS USING AES AND SIMS

被引：0
|
作者：
KAZMERSKI, LL
IRELAND, PJ
SHELDON, P
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1979年 / 24卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：277 / 277
页数：1
相关论文
共 50 条
  • [1] Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2-GaAs metal-oxide-semiconductor devices
    Kundu, Souvik
    Shripathi, T.
    Banerji, P.
    SOLID STATE COMMUNICATIONS, 2011, 151 (24) : 1881 - 1884
  • [2] STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY
    MIMURA, T
    FUKUTA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1147 - 1155
  • [3] GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO2 and GaAs oxide grown using a photoelectrochemical oxidation method
    Lee, Hsin-Ying
    Lin, Yuan-Fu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (01)
  • [4] INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES
    PLOOG, K
    FISCHER, A
    APPLIED PHYSICS, 1977, 13 (02): : 111 - 121
  • [5] Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
    Yang, T.
    Liu, Y.
    Ye, P. D.
    Xuan, Y.
    Pal, H.
    Lundstrom, M. S.
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [6] Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization
    Cunha, Jose M. V.
    Barreiros, M. Alexandra
    Curado, Marco A.
    Lopes, Tomas S.
    Oliveira, Kevin
    Oliveira, Antonio J. N.
    Barbosa, Joao R. S.
    Vilanova, Antonio
    Brites, Maria Joao
    Mascarenhas, Joao
    Flandre, Denis
    Silva, Ana G.
    Fernandes, Paulo A.
    Salome, Pedro M. P.
    ADVANCED MATERIALS INTERFACES, 2021, 8 (20):
  • [7] Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal-Oxide-Semiconductor Applications
    Liu, L. N.
    Tang, W. M.
    Huang, X. D.
    Xu, J. P.
    Lai, P. T.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (07) : 3080 - 3085
  • [8] Interface engineering for Ge metal-oxide-semiconductor devices
    Dimoulas, A.
    Brunco, D. P.
    Ferrari, S.
    Seo, J. W.
    Panayiotatos, Y.
    Sotiropoulos, A.
    Conard, T.
    Caymax, M.
    Spiga, S.
    Fanciulli, M.
    Dieker, Ch.
    Evangelou, E. K.
    Galata, S.
    Houssa, M.
    Heyns, M. M.
    THIN SOLID FILMS, 2007, 515 (16) : 6337 - 6343
  • [9] METAL-OXIDE-SEMICONDUCTOR INTERFACE INVESTIGATED BY MONOENERGETIC POSITRONS
    UEDONO, A
    TANIGAWA, S
    OHJI, Y
    PHYSICS LETTERS A, 1988, 133 (1-2) : 82 - 84
  • [10] INTERFACE STATES AND INTERNAL PHOTOEMISSION IN P-TYPE GAAS METAL-OXIDE-SEMICONDUCTOR SURFACES
    KASHKAROV, PK
    KAZIOR, TE
    LAGOWSKI, J
    GATOS, HC
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 963 - 970
12345