TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS

被引：47

作者：

STIRN, RJ ^{[1
]}

YEH, YCM ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 04期

关键词：

D O I：

10.1109/T-ED.1977.18762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：476 / 483

页数：8

共 50 条

[1] CHARACTERISTICS OF GAAS-ANODIC OXIDE METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
DAS, P
CHAKRAVARTI, SN
BHAT, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1605 - 1607
[2] THEORY OF METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
SRIVASTAVA, GP
BHATNAGAR, PK
DHARIWAL, SR
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (06) : 581 - 587
[3] TEMPERATURE CONSIDERATIONS IN METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
BHATNAGAR, PK
GARG, RK
VISHEN, A
SRIVASTAVA, GP
[J]. SOLAR CELLS, 1984, 11 (03): : 263 - 267
[4] IMAGE FORCE EFFECTS IN METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
OJHA, VN
BHATNAGAR, PK
DHARIWAL, SR
SHARMA, KK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1734 - 1736
[5] STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY
MIMURA, T
FUKUTA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1147 - 1155
[6] METAL-OXIDE-GAAS SOLAR-CELLS
STIRN, RJ
YEH, YCM
FONASH, SJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 894 - 896
[7] IMPROVED GAAS METAL-OXIDE SEMICONDUCTOR SOLAR-CELLS WITH A SPIN-ON OXIDE LAYER
SIRCAR, P
DAT, R
[J]. CANADIAN JOURNAL OF PHYSICS, 1981, 59 (05) : 716 - 717
[8] METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY
HITTINGER, WC
[J]. SCIENTIFIC AMERICAN, 1973, 229 (02) : 48 - 57
[9] OPTIMIZATION OF OXIDE-SEMICONDUCTOR-BASE-SEMICONDUCTOR SOLAR-CELLS
SINGH, R
RAJKANAN, K
BRODIE, DE
MORGAN, JH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 656 - 662
[10] A PURE METAL POLYCIDE METAL-OXIDE-SEMICONDUCTOR GATE TECHNOLOGY
SAKIYAMA, K
YAMAUCHI, Y
MATSUDA, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1685 - 1691

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