Plasma etching of III-V semiconductors in BCl3 chemistries .2. InP and related compounds

被引：5

作者：

Lee, JW ^{[1
]}

Hong, J ^{[1
]}

Lambers, ES ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

Hobson, WS ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1997年 / 17卷 / 02期

关键词：

plasma etching; electron cyclotron resonance; plasma; semiconductors;

D O I：

10.1007/BF02766813

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

BCl3/Ar and BCl3/N-2 plasma chemistries were compared for patterning of InP, InAs, InSb, InGaAs, InGaAsP, and AlInAs. Under electron cyclotron resonance conditions etch rates in excess of 1 mu m/min can be achieved at room temperature with low additional rf chuck power (150 W). The etch rates are similar for both chemistries, with smoother surface morphologies for BCl3/Ar. However, the surfaces are still approximately an order of magnitude rougher (as quantified by atomic force microscopy) than those obtained under the same conditions with Cl-2/Ar. InP surfaces etched at high BCl3-to-Ar ratios have measurable concentrations of boron- and chlorine-containing residues.

引用

页码：169 / 179

页数：11

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