DOWNSTREAM PLASMA ACTIVATED ETCHING OF III-V COMPOUND SEMICONDUCTORS

被引：0
|
作者：
IYER, R
LILE, DL
机构：
来源：
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS | 1989年 / 144卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：519 / 524
页数：6
相关论文
共 50 条
  • [1] PLASMA ETCHING APPLIED TO III-V COMPOUND SEMICONDUCTORS.
    Ibbotson, Dale E.
    Vide, les Couches Minces, 1983, 38 (218):
  • [2] IC1 plasma etching of III-V semiconductors
    Lee, J.W.
    Hong, J.
    Lambers, E.S.
    Pearton, S.J.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (03):
  • [3] IC1 plasma etching of III-V semiconductors
    Lee, JW
    Hong, J
    Lambers, ES
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (03): : 652 - 656
  • [4] Thermally activated defect transformations in III-V compound semiconductors
    Turos, A
    Stonert, A
    Breeger, B
    Wendler, E
    Wesch, W
    NUKLEONIKA, 1999, 44 (02) : 93 - 101
  • [5] Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
    Kamimura, Ryuichiro
    Furuta, Kanji
    IEICE TRANSACTIONS ON ELECTRONICS, 2017, E100C (02): : 150 - 155
  • [6] Wet etching of III-V semiconductors
    Gomes, WP
    PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 215 - 295
  • [7] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTORS
    DONNELLY, VM
    FLAMM, DL
    IBBOTSON, DE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 626 - 628
  • [8] PASSIVATION OF III-V COMPOUND SEMICONDUCTORS
    VIKTOROVITCH, P
    REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 895 - 914
  • [9] ON THE OXIDATION OF III-V COMPOUND SEMICONDUCTORS
    MONCH, W
    SURFACE SCIENCE, 1986, 168 (1-3) : 577 - 593
  • [10] STUDIES ON III-V COMPOUND SEMICONDUCTORS
    KRANZER, D
    ZIMMERL, O
    HILLBRAND, H
    POTZL, H
    ACTA PHYSICA AUSTRIACA, 1972, 35 (1-2): : 110 - +
12345