Topological surface states of Bi2Se3 coexisting with Se vacancies

被引：33

作者：

Yan, Binghai ^{[1
]}

Zhang, Delin ^{[2
]}

Felser, Claudia ^{[1
,2
]}

机构：

[1] Johannes Gutenberg Univ Mainz, D-55128 Mainz, Germany

[2] Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 1-2期

基金：

欧洲研究理事会;

关键词：

first-principles calculations; Se; vacancies; BiSe; STM; SINGLE DIRAC CONE; INSULATORS; BI2TE3;

D O I：

10.1002/pssr.201206415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Although topological surface states are known to be robust against nonmagnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to surface defects. Taking Bi2Se3 as an example, we demonstrate that Se vacancies modify the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to the second quintuple layer and get separated from the vacancies. We simulated scanning tunnelling microscopy images to distinguish surfaces with Se and Bi terminations. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：148 / 150

页数：3

共 50 条

[1] Exceptional surface states and topological order in Bi2Se3
Biswas, Deepnarayan
Maiti, Kalobaran
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2016, 208 : 90 - 94
[2] Landau Quantization of Topological Surface States in Bi2Se3
Cheng, Peng
Song, Canli
Zhang, Tong
Zhang, Yanyi
Wang, Yilin
Jia, Jin-Feng
Wang, Jing
Wang, Yayu
Zhu, Bang-Fen
Chen, Xi
Ma, Xucun
He, Ke
Wang, Lili
Dai, Xi
Fang, Zhong
Xie, Xincheng
Qi, Xiao-Liang
Liu, Chao-Xing
Zhang, Shou-Cheng
Xue, Qi-Kun
[J]. PHYSICAL REVIEW LETTERS, 2010, 105 (07)
[3] Coexisting Bi and Se surface terminations of cleaved Bi2Se3 single crystals
Hewitt, Andrew S.
Wang, Jingying
Boltersdorf, Jon
Maggard, Paul A.
Dougherty, Daniel B.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (04):
[4] Ferromagnetism in Fe-doped Bi2Se3 topological insulators with Se vacancies
Wei, X. Y.
Zhang, J. Y.
Zhao, B.
Zhu, Y.
Yang, Z. Q.
[J]. PHYSICS LETTERS A, 2015, 379 (05) : 417 - 420
[5] Interplay of topological surface and bulk electronic states in Bi2Se3
Romanowich, Megan
Lee, Mal-Soon
Chung, Duck-Young
Mahanti, S. D.
Kanatzidis, Mercouri G.
Tessmer, Stuart H.
[J]. PHYSICAL REVIEW B, 2013, 87 (08)
[6] Robust Topological States in Bi2Se3 against Surface Oxidation
Yang, Jiali
Zheng, Baobing
Chen, Zhongjia
Xu, Wangping
Wang, Rui
Xu, Hu
[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (11): : 6253 - 6259
[7] Effects of surface modification on the properties of topological surface states in Bi2Se3
Wang, Xiaoxiong
Wang, Peng
Huang, Decai
Tan, Weishi
[J]. PHYSICS LETTERS A, 2012, 376 (05) : 768 - 772
[8] Helical States of Topological Insulator Bi2Se3
Zhao, Yonghong
Hu, Yibin
Liu, Lei
Zhu, Yu
Guo, Hong
[J]. NANO LETTERS, 2011, 11 (05) : 2088 - 2091
[9] Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators
Nowak, Kamil
Jurczyszyn, Michal
Chrobak, Maciej
Mackosz, Krzysztof
Naumov, Andrii
Olszowska, Natalia
Rosmus, Marcin
Miotkowski, Ireneusz
Kozlowski, Andrzej
Sikora, Marcin
Przybylski, Marek
[J]. MATERIALS, 2022, 15 (06)
[10] Surface oxidation of the topological insulator Bi2Se3
Green, Avery J.
Dey, Sonal
An, Yong Q.
O'Brien, Brendan
O'Mullane, Samuel
Thiel, Bradley
Diebold, Alain C.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (06):

← 1 2 3 4 5 →