Topological surface states of Bi2Se3 coexisting with Se vacancies

被引：33

作者：

Yan, Binghai ^{[1
]}

Zhang, Delin ^{[2
]}

Felser, Claudia ^{[1
,2
]}

机构：

[1] Johannes Gutenberg Univ Mainz, D-55128 Mainz, Germany

[2] Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 1-2期

基金：

欧洲研究理事会;

关键词：

first-principles calculations; Se; vacancies; BiSe; STM; SINGLE DIRAC CONE; INSULATORS; BI2TE3;

D O I：

10.1002/pssr.201206415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Although topological surface states are known to be robust against nonmagnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to surface defects. Taking Bi2Se3 as an example, we demonstrate that Se vacancies modify the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to the second quintuple layer and get separated from the vacancies. We simulated scanning tunnelling microscopy images to distinguish surfaces with Se and Bi terminations. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：148 / 150

页数：3

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