Topological surface states of Bi2Se3 coexisting with Se vacancies

被引：33
|
作者：
Yan, Binghai [1 ]
Zhang, Delin [2 ]
Felser, Claudia [1 ,2 ]
机构：
[1] Johannes Gutenberg Univ Mainz, D-55128 Mainz, Germany
[2] Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 1-2期
基金：
欧洲研究理事会;
关键词：
first-principles calculations; Se; vacancies; BiSe; STM; SINGLE DIRAC CONE; INSULATORS; BI2TE3;
D O I：
10.1002/pssr.201206415
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Although topological surface states are known to be robust against nonmagnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to surface defects. Taking Bi2Se3 as an example, we demonstrate that Se vacancies modify the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to the second quintuple layer and get separated from the vacancies. We simulated scanning tunnelling microscopy images to distinguish surfaces with Se and Bi terminations. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：148 / 150
页数：3
相关论文
共 50 条
  • [21] Gas Doping on the Topological Insulator Bi2Se3 Surface
    Koleini, Mohammad
    Frauenheim, Thomas
    Yan, Binghai
    [J]. PHYSICAL REVIEW LETTERS, 2013, 110 (01)
  • [22] Evolution of Topological Surface States Following Sb Layer Adsorption on Bi2Se3
    Holtgrewe, Kris
    Hogan, Conor
    Sanna, Simone
    [J]. MATERIALS, 2021, 14 (07)
  • [23] Anomalous finite size effects on surface states in the topological insulator Bi2Se3
    Linder, Jacob
    Yokoyama, Takehito
    Sudbo, Asle
    [J]. PHYSICAL REVIEW B, 2009, 80 (20):
  • [24] Tolerance of Topological Surface States towards Magnetic Moments: Fe on Bi2Se3
    Scholz, M. R.
    Sanchez-Barriga, J.
    Marchenko, D.
    Varykhalov, A.
    Volykhov, A.
    Yashina, L. V.
    Rader, O.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 108 (25)
  • [25] Anisotropic Topological Surface States on High-Index Bi2Se3 Films
    Xu, Zhongjie
    Guo, Xin
    Yao, Mengyu
    He, Hongtao
    Miao, Lin
    Jiao, Lu
    Liu, Hongchao
    Wang, Jiannong
    Qian, Dong
    Jia, Jinfeng
    Ho, Wingkin
    Xie, Maohai
    [J]. ADVANCED MATERIALS, 2013, 25 (11) : 1557 - 1562
  • [26] Infrared Spectroscopy of the Topological Surface States of Bi2Se3 by Use of the Berreman Effect
    Falsetti, Enrico
    Nucara, Alessandro
    Shibayev, Pavel P.
    Salehi, Maryam
    Moon, Jisoo
    Oh, Seongshik
    Brubach, Jean-Blaise
    Roy, Pascale
    Ortolani, Michele
    Calvani, Paolo
    [J]. PHYSICAL REVIEW LETTERS, 2018, 121 (17)
  • [27] Fragility of Surface States and Robustness of Topological Order in Bi2Se3 against Oxidation
    Wang, Xiaoxiong
    Bian, Guang
    Miller, T.
    Chiang, T. -C.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 108 (09)
  • [28] Topological Surface States Originated Spin-Orbit Torques in Bi2Se3
    Wang, Yi
    Deorani, Praveen
    Banerjee, Karan
    Koirala, Nikesh
    Brahlek, Matthew
    Oh, Seongshik
    Yang, Hyunsoo
    [J]. PHYSICAL REVIEW LETTERS, 2015, 114 (25)
  • [29] Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3
    Barton, Adam T.
    Walsh, Lee A.
    Smyth, Christopher M.
    Qin, Xiaoye
    Addou, Rafik
    Cormier, Christopher
    Hurley, Paul K.
    Wallace, Robert M.
    Hinkle, Christopher L.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (35) : 32144 - 32150
  • [30] Origin of spin-polarized photocurrents in the topological surface states of Bi2Se3
    Ketterl, A. S.
    Otto, S.
    Bastian, M.
    Andres, B.
    Gahl, C.
    Minar, J.
    Ebert, H.
    Braun, J.
    Tereshchenko, O. E.
    Kokh, K. A.
    Fauster, Th
    Weinelt, M.
    [J]. PHYSICAL REVIEW B, 2018, 98 (15)
12345