Ferromagnetism in Fe-doped Bi2Se3 topological insulators with Se vacancies

被引：15
|
作者：
Wei, X. Y. [1 ,2 ,3 ]
Zhang, J. Y. [1 ,2 ,3 ]
Zhao, B. [1 ,2 ,3 ]
Zhu, Y. [4 ]
Yang, Z. Q. [1 ,2 ,3 ]
机构：
[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China
[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[4] Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 211100, Jiangsu, Peoples R China
来源：
PHYSICS LETTERS A | 2015年 / 379卷 / 05期
基金：
中国国家自然科学基金; 上海市自然科学基金;
关键词：
BAND-GAP;
D O I：
10.1016/j.physleta.2014.11.032
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effects of Se vacancies (vSes) on structural and magnetic properties of Fe-doped Bi2Se3 topological insulators are investigated with density-functional theory. It is found both the Fe-Fe dopants and Fe-vSe tend to form clusters. An antiferromagnetic (AFM) to ferromagnetic (FM) phase transition occurs when two Se vacancies are nearby the Fe-Fe dopants, triggered by Fe-Fe direct interactions and carrier-mediated FM interactions. Our results provide an understanding of magnetism in the magnetic topological insulators with Se vacancies. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：417 / 420
页数：4
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