Development of a Highly Integrated 10 kV SiC MOSFET Power Module with a Direct Jet Impingement Cooling System

被引：0

作者：

Mouawad, Bassem ^{[1
]}

Skuriat, Robert ^{[1
]}

Li, Jianfeng ^{[1
]}

Johnson, C. Mark ^{[1
]}

DiMarino, Christina ^{[2
]}

机构：

[1] Univ Nottingham, Power Elect Machines & Control, Univ Pk Campus, Nottingham, England

[2] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA USA

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

基金：

英国工程与自然科学研究理事会;

关键词：

silicon carbide; packaging; high voltage; high density; SiC MOSFET; power module; direct jet impingement;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.

引用

页码：256 / 259

页数：4

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