Development of a Highly Integrated 10 kV SiC MOSFET Power Module with a Direct Jet Impingement Cooling System

被引：0

作者：

Mouawad, Bassem ^{[1
]}

Skuriat, Robert ^{[1
]}

Li, Jianfeng ^{[1
]}

Johnson, C. Mark ^{[1
]}

DiMarino, Christina ^{[2
]}

机构：

[1] Univ Nottingham, Power Elect Machines & Control, Univ Pk Campus, Nottingham, England

[2] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA USA

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

基金：

英国工程与自然科学研究理事会;

关键词：

silicon carbide; packaging; high voltage; high density; SiC MOSFET; power module; direct jet impingement;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.

引用

页码：256 / 259

页数：4

共 50 条

[41] Design of 10 kV SiC MOSFET Power Module Based MW-level Modular Multilevel Converter Phase-leg
Chen, Ruirui
Li, Dingrui
Lin, Min
Al Sager, Mohamed
Gao, Zihan
Wang, Fred
Bai, Hua
Tolbert, Leon M.
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 1087 - 1094
[42] A 10kV/200A SiC MOSFET Module with Series-Parallel Hybrid Connection
Xiao, Qiang
Dong, Zezheng
Wu, Xinke
Sheng, Kuang
2014 INTERNATIONAL ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), 2014, : 291 - 295
[43] Assessment Methodology for Power-Cell based on High-Current 10 kV SiC MOSFET Half-Bridge Module
Mocevic, Slavko
Yu, Jianghui
Xu, Yue
Stewart, Joshua
Wang, Jun
Cvetkovic, Igor
Dong, Dong
Burgos, Rolando
Boroyevich, Dushan
2020 IEEE 11TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG), 2020, : 91 - 98
[44] Investigation of a fast high-repetitive 10-kV SiC-MOSFET switching module
Bischoff, Rainer
Stoll, Meik
Himmelsbach, Ralf
Scharnholz, Sigo
2018 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE (IPMHVC), 2018, : 200 - 203
[45] Design of a Novel, High-Density, High-Speed 10 kV SiC MOSFET Module
DiMarino, Christina
Johnson, Mark
Mouawad, Bassem
Li, Jianfeng
Boroyevich, Dushan
Burgos, Rolando
Lu, Guo-Quan
Wang, Meiyu
2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 4003 - 4010
[46] 10 kV, 120 A SiC MOSFET Modules for a Power Electronics Building Block (PEBB)
DiMarino, Christina
Cvetkovic, Igor
Shen, Zhiyu
Burgos, Rolando
Boroyevich, Dushan
2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 54 - 57
[47] Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
Chen, Hao
Wei, Tiwei
Li, Xiaoling
Chen, Yuxiang
Lin, Yujui
Chinnaiyan, Sudharsan
Asheghi, Mehdi
Mantooth, H. Alan
2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
[48] A FULL SIC MOSFET DCDC BOOST POWER MODULE USING 2 KV SIC MOSFET FOR 1500V STRING SOLAR INVERTER APPLICATIONS
Liu, Yusi
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 188 - 191
[49] Thermal Management of 6-in-1 SiC Power Module with Double-Sided Impingement Cooling
Han, Yong
Tang, Gongyue
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024, 2024, : 1493 - 1497
[50] A 10-kW SiC Inverter with A Novel Printed Metal Power Module With Integrated Cooling Using Additive Manufacturing
Chinthavali, Madhu
Ayers, Curt
Campbell, Steven
Wiles, Randy
Ozpineci, Burak
2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 47 - 53

← 1 2 3 4 5 →