3.3kV Power Module for Electric Distribution Equipment with SiC Trench Gate MOSFET

被引:0
|
作者
Takayanagi, R. [1 ]
Taniguchi, K. [1 ]
Hoya, M. [1 ]
Kanai, N. [1 ]
Tsuji, T. [1 ]
Hori, M. [1 ]
Ikeda, Y. [1 ]
Maruyama, K. [1 ]
Kawamura, I. [1 ]
机构
[1] Fuji Elect Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano, Japan
关键词
SiC; Electric Distribution; Trench-Gate MOSFET;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
3.3 kV / 200 A All-SiC module with trench-gate SiC MOSFETs is developed for static var compensator (SVC), a type of the electric distribution equipment. This module has the structural feature; resin-mold single-switch units are arrayed and electrically connected by bus-bars to make the circuit configuration dual (2-in-1). This structure leads to the smaller stack and the higher long-term reliability. Applied trench-gate SiC MOSFETs, lower loss is also accomplished. ON-state resistance is reduced around 10 %. In addition, 60% reduction of total switching loss is achieved. These characteristics of low energy loss can contribute to downsizing of SVC equipment as well as energy saving.
引用
收藏
页码:83 / 87
页数:5
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