Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

The main objective of this paper is to develop a Simulink based modeling platform for a commercial 3.3 kV/400 A SiC MOSEFT power module. The implemented equivalent circuit of 3.3 kV SiC MOSFET in Simulink platform is based on the original well-established single-chip Mc Nutt/Hefner model. The developed model has been validated with the experimental data both for static and dynamic tests at several temperatures. The dynamic simulations have further been verified with various gate resistances that accurately describes the transient operation during turn-on and turn off of the pulse sequence. The influence of various parasitic elements (i.e., stray inductances) have been studied. Finally, the operation of a Buck converter, whose switch consists of two modules in series, has been verified, studying the converter efficiency under various circuit parameters.