A Novel 3.6kV/400A SiC Intelligent Power Module (IPM)

被引：3
|
作者：
Guo, Zhicheng [1 ]
Zhang, Liqi [1 ]
Sen, Soumik [1 ]
Huang, Alex Q. [1 ]
机构：
[1] Univ Texas Austin, Semicond Power Elect Ctr, Austin, TX 78712 USA
来源：
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021) | 2021年
关键词：
IPM; half-bridge; medium-voltage; SiC MOSFET; VOLTAGE;
D O I：
10.1109/APEC42165.2021.9487034
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A novel and cost effective 3.6kV/400A SiC half-bridge IPM is developed based on the Austin SuperMOS [1] concept and reported here for the first time. Twenty-four 1200V SiC MOSFETs are integrated in the IPM together with a high isolation voltage gate power supply, gate driver with overcurrent protection. Ultra-low power loop stray inductance is achieved by utilizing magnetic flux cancellation in the IPM. Static and dynamic performances of the IPM are analyzed experimentally.
引用
收藏
页码：39 / 43
页数：5
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