Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

被引：0

作者：

Gallstrom, A. ^{[1
]}

Magnusson, B. ^{[2
]}

Beyer, F. C. ^{[1
]}

Gali, A. ^{[3
,4
]}

Son, N. T. ^{[1
]}

Leone, S. ^{[1
]}

Lyanov, I. G. ^{[1
]}

Henry, A. ^{[1
]}

Hemmingsson, C. G. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Norstel AB, S-60238 Norrkoping, Sweden

[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

deep level defect; PL; transition metal; Crystal Field Model; SILICON-CARBIDE; VANADIUM;

D O I：

10.4028/www.scientific.net/MSF.717-720.211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.

引用

页码：211 / +

页数：2

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