Atomic-step observations on 6H-and 15R-SiC polished surfaces

被引：15
|
作者：
Vicente, P
Pernot, E
Chaussende, D
Camassel, J
机构：
[1] NOVASiC, Savoie Technolac, FR-73375 Le Bourget du Lac, France
[2] Univ Montpellier 2, GES, FR-34095 Montpellier 5, France
[3] LMGP, UMR 5628, INPG, FR-38402 St Martin Dheres, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
atomic steps; chemico-mechanical polishing; surface preparation;
D O I：
10.4028/www.scientific.net/MSF.389-393.729
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Step structures have been reproducibly achieved after chemico-mechanical polishing (CMP) of 6H and 15R-SiC surfaces. The formation of single bilayer steps on the Si-face of wafer is reported for the first time. A measure of c-axis misorientation has been deduced from the step width and the influence of the crystal quality has been shown.
引用
收藏
页码：729 / 732
页数：4
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