Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

被引：0

作者：

Gallstrom, A. ^{[1
]}

Magnusson, B. ^{[2
]}

Beyer, F. C. ^{[1
]}

Gali, A. ^{[3
,4
]}

Son, N. T. ^{[1
]}

Leone, S. ^{[1
]}

Lyanov, I. G. ^{[1
]}

Henry, A. ^{[1
]}

Hemmingsson, C. G. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Norstel AB, S-60238 Norrkoping, Sweden

[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

deep level defect; PL; transition metal; Crystal Field Model; SILICON-CARBIDE; VANADIUM;

D O I：

10.4028/www.scientific.net/MSF.717-720.211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.

引用

页码：211 / +

页数：2

共 50 条

[11] Raman excitation profiles of 3C-, 4H-, 6H-, 15R-, and 21R-SiC
Püsche, R
Hundhausen, M
Ley, L
SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 325 - 328
[12] 4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seeds
Maltsev, AA
Maksimov, AY
Yushin, NK
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 41 - 44
[13] Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
Gallstrom, Andreas
Magnusson, Bjorn
Beyer, Franziska C.
Gali, Adam
Son, N. T.
Leone, Stefano
Ivanov, Ivan G.
Hemmingsson, Carl G.
Henry, Anne
Janzen, Erik
PHYSICA B-CONDENSED MATTER, 2012, 407 (10) : 1462 - 1466
[14] STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES
NIKITINA, IP
GLASS, RC
JANZEN, E
GUSEVA, NB
MALTSEV, AA
JOURNAL OF CRYSTAL GROWTH, 1995, 152 (04) : 292 - 299
[15] The ground state of silicon vacancies in 6H-SiC and 15R-SiC
Lingner, T
Greulich-Weber, S
Spaeth, JM
PHYSICA B-CONDENSED MATTER, 2001, 308 : 649 - 651
[16] Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC
Nakamura, SI
Kumagai, H
Kimoto, T
Matsunami, H
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 651 - 654
[17] Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
Lohrmann, A.
Castelletto, S.
Klein, J. R.
Ohshima, T.
Bosi, M.
Negri, M.
Lau, D. W. M.
Gibson, B. C.
Prawer, S.
McCallum, J. C.
Johnson, B. C.
APPLIED PHYSICS LETTERS, 2016, 108 (02)
[18] Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC heterojunctions
S. Yu. Davydov
A. A. Lebedev
O. V. Posrednik
Semiconductors, 2005, 39 : 1391 - 1393
[19] Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC heterojunctions
Davydov, SY
Lebedev, AA
Posrednik, OV
SEMICONDUCTORS, 2005, 39 (12) : 1391 - 1393
[20] Midgap defects in 4H-, 6H- and 3C-SiC detected by deep level optical spectroscopy
Reshanov, SA
Schneider, K
Helbig, R
Pensl, G
Nagasawa, H
Schöner, A
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 513 - 516

← 1 2 3 4 5 →