ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells

被引：0

作者：

Feldberg, N. ^{[1
]}

Keen, B. ^{[1
]}

Aldous, J. D. ^{[1
]}

Scanlon, D. O. ^{[2
]}

Stampe, P. A. ^{[3
]}

Kennedy, R. J. ^{[3
]}

Reeves, R. J. ^{[4
]}

Veal, T. D. ^{[5
]}

Durbin, S. M. ^{[1
,6
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] UCL, Kathleen Lonsdale Mat Chem, London WC1H0AJ, England

[3] Florida A&M Univ, Dept Phys, Tallahassee, FL 32307 USA

[4] Univ Canterbury, Dept Phys & Astron, Christchurch, New Zealand

[5] Univ Liverpool, Stephenson Inst Renewable Energy, Dept Phys, Liverpool, Merseyside, England

[6] Univ Buffalo, Dept Elect Engn, Buffalo, NY 14228 USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

基金：

英国工程与自然科学研究理事会;

关键词：

II-IV-V-2; ZnSnN2; earth abundant element; photovoltaics; molecular beam epitaxy; ZNGEN2;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The Zn-IV-N-2 semiconductor family represents a potential earth abundant element alternative for PV and lighting applications, with a predicted band gap range of similar to 0.6 to similar to 5 eV. While the Ge and Si containing members of the family have been successfully synthesized, little is known about the lower band gap energy members, in particular ZnSnN2. Here, we report the growth of this compound using a plasma-assisted molecular beam epitaxy technique, and compare experimental optical and structural properties to density functional theory predictions.

引用

页码：2524 / 2527

页数：4

共 50 条

[31] Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights
Chen, Shiyou
Narang, Prineha
Atwater, Harry A.
Wang, Lin-Wang
ADVANCED MATERIALS, 2014, 26 (02) : 311 - 315
[32] Earth-abundant cocatalysts for semiconductor-based photocatalytic water splitting
Ran, Jingrun
Zhang, Jun
Yu, Jiaguo
Jaroniec, Mietek
Qiao, Shi Zhang
CHEMICAL SOCIETY REVIEWS, 2014, 43 (22) : 7787 - 7812
[33] Earth-abundant and biocompatible alkali pnictogen dichalcogenide colloidal semiconductor nanocrystals
Rosales, Bryan
White, Miles
Vela, Javier
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2019, 257
[34] Investigating the potential of earth-abundant ZnSnxGe1-xN2 alloys for quantum well solar cells
Laidouci, Abdelmoumene
Dakua, Pratap Kumar
Panda, Deepak Kumar
Kashyap, Savita
MICRO AND NANOSTRUCTURES, 2023, 184
[35] Recent advances in earth-abundant photocatalyst materials for solar H2 production
Kahng, Soojin
Yoo, Harin
Kim, Jung Hyeun
ADVANCED POWDER TECHNOLOGY, 2020, 31 (01) : 11 - 28
[36] Earth-abundant Cu3-V-VI4 absorbers for tandem solar cells
Heo, Jaeseok
Kokenyesi, Robert S.
Jieratum, Vorranutch
Keszler, Douglas A.
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2013, 245
[37] Earth-abundant absorber based solar cells onto low weight stainless steel substrate
Lopez-Marino, Simon
Neuschitzer, Markus
Sanchez, Yudania
Fairbrother, Andrew
Espindola-Rodriguez, Moises
Lopez-Garcia, Juan
Placidi, Marcel
Calvo-Barrio, Lorenzo
Perez-RodrIguez, Alejandro
Saucedo, Edgardo
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 130 : 347 - 353
[38] The Future of Using Earth-Abundant Elements in Counter Electrodes for Dye-Sensitized Solar Cells
Briscoe, Joe
Dunn, Steve
ADVANCED MATERIALS, 2016, 28 (20) : 3802 - 3813
[39] Solar Water Splitting Using Earth-Abundant Electrocatalysts Driven by High-Efficiency Perovskite Solar Cells
Asiri, Abdullah M.
Ren, Dan
Zhang, Hong
Khan, Sher Bahadar
Alamry, Khalid A.
Marwani, Hadi M.
Khan, Mohammad Sherjeel Javed
Adeosun, Waheed A.
Zakeeruddin, Shaik M.
Graetzel, Michael
CHEMSUSCHEM, 2022, 15 (04)
[40] Earth-abundant CZTSSe thin film solar cells on flexible stainless steel foil substrates
Kim, Hae-Sun
Jeong, Woo-Lim
Lee, Dong-Seon
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 1665 - 1668

← 1 2 3 4 5 →