ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells

被引：0

作者：

Feldberg, N. ^{[1
]}

Keen, B. ^{[1
]}

Aldous, J. D. ^{[1
]}

Scanlon, D. O. ^{[2
]}

Stampe, P. A. ^{[3
]}

Kennedy, R. J. ^{[3
]}

Reeves, R. J. ^{[4
]}

Veal, T. D. ^{[5
]}

Durbin, S. M. ^{[1
,6
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] UCL, Kathleen Lonsdale Mat Chem, London WC1H0AJ, England

[3] Florida A&M Univ, Dept Phys, Tallahassee, FL 32307 USA

[4] Univ Canterbury, Dept Phys & Astron, Christchurch, New Zealand

[5] Univ Liverpool, Stephenson Inst Renewable Energy, Dept Phys, Liverpool, Merseyside, England

[6] Univ Buffalo, Dept Elect Engn, Buffalo, NY 14228 USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

基金：

英国工程与自然科学研究理事会;

关键词：

II-IV-V-2; ZnSnN2; earth abundant element; photovoltaics; molecular beam epitaxy; ZNGEN2;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The Zn-IV-N-2 semiconductor family represents a potential earth abundant element alternative for PV and lighting applications, with a predicted band gap range of similar to 0.6 to similar to 5 eV. While the Ge and Si containing members of the family have been successfully synthesized, little is known about the lower band gap energy members, in particular ZnSnN2. Here, we report the growth of this compound using a plasma-assisted molecular beam epitaxy technique, and compare experimental optical and structural properties to density functional theory predictions.

引用

页码：2524 / 2527

页数：4

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