Performance enhancement of a silicon MEMS piezoresistive single axis accelerometer with electroplated gold on a proof mass

被引:40
|
作者
Sankar, A. Ravi [1 ]
Lahiri, S. K. [2 ]
Das, S. [3 ]
机构
[1] Indian Inst Technol, Dept Elect & ECE, Microelect & MEMS Lab, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Adv Technol Dev Ctr, Sponsored Res & Ind Consultancy, Kharagpur 721302, W Bengal, India
[3] Indian Inst Technol, Sch Med Sci & Technol, Kharagpur 721302, W Bengal, India
关键词
FABRICATION; ALUMINUM;
D O I
10.1088/0960-1317/19/2/025008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Performance enhancement of a silicon MEMS piezoresistive single axis accelerometer with electroplated gold on a proof mass is presented in this paper. The fabricated accelerometer device consists of a heavy proof mass supported by four thin flexures. Boron-diffused piezoresistors located near the fixed ends of the flexures are used for sensing the developed stress and hence acceleration. Performance enhancement is achieved by electroplating a gold mass of 20 mu m thickness on top of the proof mass. A commercially available sulfite-based solution TSG-250(TM) was used for the electroplating process. Aluminum metal lines were used to form a Wheatstone bridge for signal pick-up. To avoid galvanic corrosion between two dissimilar metals having contact in an electrolyte, a shadow mask technique was used to selectively deposit a Cr/Au seed layer on an insulator atop the proof mass for subsequent electrodeposition. Bulk micromachining was performed using a 5% dual-doped TMAH solution. Fabricated devices with different electroplated gold areas were tested up to +/- 13 g acceleration. For electroplated gold dimensions of 2500 mu m x 2500 mu m x 20 mu m on a proof mass, sensitivity along the Z-axis is increased by 21.8% as compared to the structure without gold. Off-axis sensitivities along the X- and Y-axes are reduced by 7.6% and 6.9%, respectively.
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页数:10
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